Published January 1, 2020
| Version v1
Journal article
Diode-end-pumped solid state ZnWO4 Raman laser at 2254 nm
Creators
- 1. College of Information Technology, Shenzhen University, Shenzhen 518060, Guangdong (China)
- 2. Shenzhen Key Laboratory of Laser Engineering, Key Laboratory of Advanced Optical Precision Manufacturing Technology of Guangdong Higher Education Institutes, College of Optoelectronic Engineering, Shenzhen University, Shenzhen 518060, Guangdong (China)
- 3. State Key Laboratory of Crystal Materials and Institute of Crystal Materials, Shandong University, Jining 250100, Shandong (China)
- 4. Han's Laser Technology Industry Group Co., Ltd., Shenzhen 518057, Guangdong (China)
Description
A diode-end-pumped actively Q-switch intracavity Raman laser with a Tm:YLF laser gain medium and a ZnWO4 Raman gain crystal is demonstrated for the first time. Under the pump power of 30 W at 793 nm, the average output power of 184 mW at first Stokes wavelength of 2254 nm was obtained at a pulse repetition of 2.5 kHz. The corresponding pulse width and output peak power are 5.8 ns and 12.79 kW, respectively. Near-diffraction limited beam quality was observed (M 2 ⩽ 1.46). (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/1555-6611/ab4f67Additional details
Identifiers
Publishing Information
- Journal Title
- Laser Physics (Online)
- Journal Volume
- 30
- Journal Issue
- 1
- Journal Page Range
- [5 p.]
- ISSN
- 1555-6611
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53032089
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CRYSTALS; DIFFRACTION; GAIN; KHZ RANGE; LASERS; PEAK LOAD; PULSES; Q-SWITCHING; WAVELENGTHS; ZINC TUNGSTATES
- Descriptors DEC
- AMPLIFICATION; COHERENT SCATTERING; FREQUENCY RANGE; OXYGEN COMPOUNDS; REFRACTORY METAL COMPOUNDS; SCATTERING; TRANSITION ELEMENT COMPOUNDS; TUNGSTATES; TUNGSTEN COMPOUNDS; ZINC COMPOUNDS