Formation of TiSi2 thin films from chemical vapor deposition using Til4
- 1. Korea Advanced Institute of Science and Technology, Teajon (Korea, Republic of)
- 2. Electronics and Telecommunications Research Institute, Taejon (Korea, Republic of)
Description
The formation of TiSi2 films by chemical vapor deposition was investigated for the application as a contact plug material because of its low resistivity, low contact resistance with N+ and P+ Si, and good chemical stability with Si. TiI4 and SiH4 were used as source gases. TiSi2 thin films with C49 phase were formed at 650 .deg. C on Si (100) wafer, while a Ti5Si3 phase was formed at 650 .deg. C on SiO2 substrate. The resistivity of the C49 phase films was 210 μΩ-cm. The C49 phase was completely transformed into a C54 phase above 800 .deg. C annealing in an N2 atmosphere and the resistivity reduced to 34 μΩ-cm. We were able to deposit TiSi2 films at lower temperature using TiI4 precursor, compared to TiCl4 precursor. The Cl and HCl byproducts that originated from TiCl4 can be excluded using TiI4 precursor
Additional details
Publishing Information
- Journal Title
- Journal of the Korean Physical Society
- Journal Volume
- 33
- Journal Issue
- Suppl
- Series
- 9 refs, 7 figs
- Journal Page Range
- p. S121-S124
- ISSN
- 0374-4884
INIS
- Country of Publication
- Korea, Republic of
- Country of Input or Organization
- Korea, Republic of
- INIS RN
- 34074546
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANNEALING; CHEMICAL VAPOR DEPOSITION; STABILITY; SYNTHESIS; THIN FILMS; TITANIUM SILICIDES
- Descriptors DEC
- CHEMICAL COATING; DEPOSITION; FILMS; HEAT TREATMENTS; SILICIDES; SILICON COMPOUNDS; SURFACE COATING; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS