Published October 2002 | Version v1
Journal article Metadata-only

The effect of the concentration of the majority charge carriers and irradiation intensity on the efficiency of radiation-defect production in n-Si crystals

Creators

  • 1. Georgian Technical University, ul. M. Kostaza 77, Tbilisi, 380075 (Georgia)

Description

The effect of the concentration of the majority charge carriers (n) and the electron-flux density (φ) on the efficiency of radiation-defect production (η) in n-Si samples was studied. It is shown that the dependence η(φ) features a maximum, which shifts to larger values of φ as n increases. This effect is explained by assuming that there is an optimal relation between the concentrations of primary defects produced per unit time and those of the free charge carriers, which charge these defects

Additional details

Identifiers

DOI
10.1134/1.1513847;

Publishing Information

Journal Title
Semiconductors
Journal Volume
36
Journal Issue
10
Journal Page Range
p. 1077-1078
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35051946
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
CARRIER LIFETIME; CHARGE CARRIERS; CRYSTAL DEFECTS; ELECTRON BEAMS; EXPERIMENTAL DATA; FLUX DENSITY; N-TYPE CONDUCTORS; PHOTOCONDUCTIVITY; PHYSICAL RADIATION EFFECTS; RECOMBINATION; SEMICONDUCTOR MATERIALS; SILICON
Descriptors DEC
BEAMS; CRYSTAL STRUCTURE; DATA; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; INFORMATION; LEPTON BEAMS; LIFETIME; MATERIALS; NUMERICAL DATA; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SEMIMETALS

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 36, 1157-1158 (No. 10, 2002); (c) 2002 MAIK ''Nauka / Interperiodica''.