Published February 25, 2014 | Version v1
Journal article

Huge susceptibility increase within the (1−x) TeO2 + x TeO3 crystal system: Ab initio calculation study

  • 1. Laboratoire de Science des Procédés Céramiques et de Traitements de Surface UMR 7315 CNRS, Centre Européen de la Céramique, Université de Limoges, 12 rue Atlantis, 87068 Limoges Cedex (France)
  • 2. Physical Department, Saint Petersburg State University, 198504 Petrodvorets, Saint Petersburg (Russian Federation)

Description

Highlights: • Minor role of the electron lone pairs of Te atom on non-linear optic properties. • TeIVO4 → TeVIO6 evolution induces an augmentation of the χ3 susceptibility. • The Te-O-Te chain -length influences on the lattice χ3 susceptibility. -- Abstract: The ab initio calculations performed for the TeO2 → Te4O9 → Te2O5 → TeO3 series of crystal lattices have revealed that, in this series, the average χ3 non-linear susceptibility increases for about 10 times. Such a huge effect is attributed to the strong augmentation of the Te atom d-function contributions in valence molecular orbitals, which accompanies the Te4+ → Te6+ transformation. The results obtained allow concluding that the TeO3-related materials can be of interest in non-linear optic device engineering

Availability note (English)

Available from http://dx.doi.org/10.1016/j.jallcom.2013.10.126

Additional details

Identifiers

DOI
10.1016/j.jallcom.2013.10.126;
PII
S0925-8388(13)02541-3;

Publishing Information

Journal Title
Journal of Alloys and Compounds
Journal Volume
587
Journal Page Range
p. 120-125
ISSN
0925-8388
CODEN
JALCEU

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45054196
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTAL LATTICES; CRYSTALS; DENSITY FUNCTIONAL METHOD; TELLURIUM IONS; TELLURIUM OXIDES; VANADATES
Descriptors DEC
CALCULATION METHODS; CHALCOGENIDES; CHARGED PARTICLES; CRYSTAL STRUCTURE; IONS; OXIDES; OXYGEN COMPOUNDS; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; VANADIUM COMPOUNDS; VARIATIONAL METHODS

Optional Information

Copyright
Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.