Published 2015 | Version v1
Journal article Metadata-only

Raman scattering from Ge1-xSnx (x ≤ 0.14) alloys

Creators

  • 1. Universidad Autonoma de San Luis Potosi, Coordinacion para la Innovacion y la Aplicacion de la Ciencia y la Tecnologia, Alvaro Obregon No. 64, 78000 San Luis Potosi, S. L. P. (Mexico)
  • 2. Universidad de Guadalajara, Centro Universitario de los Lagos, Av. Enrique Diaz de Leon No. 1144, Col. Paseos de la Montana, 47460 Lagos de Moreno, Jalisco (Mexico)

Description

Ge1-xSnx alloys with x concentration up to 0.14 were grown on Ge(001) and GaAs(001) substrates in a conventional R. F. Magnetron Sputtering system at low substrate temperatures. The structural characteristics of these alloys were studied for different Sn concentrations between 1 to 14% by high resolution X-ray diffraction, and Raman spectroscopy. Contrasting characteristics of the grown layers are observed if the Sn concentration is larger or smaller than 6% as revealed by X-ray diffraction and Raman spectroscopy. (Author)

Additional details

Publishing Information

Journal Title
Revista Mexicana de Fisica
Journal Volume
61
Journal Issue
6
Journal Page Range
p. 437-443
ISSN
0035-001X
CODEN
RMXFAT

INIS

Country of Publication
Mexico
Country of Input or Organization
Mexico
INIS RN
46134836
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALLOYS; CONCENTRATION RATIO; GALLIUM ARSENIDES; LAYERS; MAGNETRONS; RAMAN EFFECT; RAMAN SPECTROSCOPY; RESOLUTION; SPUTTERING; SUBSTRATES; X-RAY DIFFRACTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; DIFFRACTION; DIMENSIONLESS NUMBERS; ELECTRON TUBES; ELECTRONIC EQUIPMENT; EQUIPMENT; GALLIUM COMPOUNDS; LASER SPECTROSCOPY; MICROWAVE EQUIPMENT; MICROWAVE TUBES; PNICTIDES; SCATTERING; SPECTROSCOPY