Published February 1977 | Version v1
Journal article Metadata-only

Distribution of radiation-damage rate with depth in silicon bombarded with the high energy electrons

Creators

  • 1. Government Industrial Research Inst., Nagoya (Japan)

Description

no abstract available

Additional details

Identifiers

DOI
10.1143/jjap.16.387;

Publishing Information

Journal Title
Japanese Journal of Applied Physics
Journal Volume
16
Journal Issue
2
Series
Jpn. J. Appl. Phys.
Journal Page Range
387-388
ISSN
0021-4922

INIS

Country of Publication
Japan
Country of Input or Organization
Japan
INIS RN
8343110
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
No Abstract
Descriptors DEI
CRYSTAL DEFECTS; DEPTH; ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; IRRADIATION; MEV RANGE 01-10; PHYSICAL RADIATION EFFECTS; SILICON; SPATIAL DISTRIBUTION
Descriptors DEC
BEAMS; CRYSTAL STRUCTURE; DIMENSIONS; DISTRIBUTION; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY RANGE; LEPTON BEAMS; MEV RANGE; PARTICLE BEAMS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SEMIMETALS

Optional Information

Notes
Published in summary form only.; Updated automatically by Metadata and Full-Text Enrichment Agent