Published October 2011 | Version v1
Journal article

Surface morphology created by nanosecond laser annealing of amorphised Si layer-Investigations by complementary methods

  • 1. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02 668 Warsaw (Poland)

Description

The formation of morphological structures on an amorphised Si surface by annealing with nanosecond laser pulse is studied. The resulting structures are investigated by complementary methods: interference microscopy with Nomarski contrast, atomic force microscopy and high-resolution electron microscopy. The evolution of the misfit morphological structures for variable fluence of the laser beam and for variable area of the focused laser beam is shown.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.radphyschem.2011.03.021

Additional details

Identifiers

DOI
10.1016/j.radphyschem.2011.03.021;
PII
S0969-806X(11)00131-9;

Publishing Information

Journal Title
Radiation Physics and Chemistry (1993)
Journal Volume
80
Journal Issue
10
Journal Page Range
p. 1031-1035
ISSN
0969-806X
CODEN
RPCHDM

Conference

Title
10. international school and symposium on synchrotron radiation in natural science (ISSRNS)
Dates
6-12 Jun 2010
Place
Szklarska Poreba (Poland)

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
43059375
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; ATOMIC FORCE MICROSCOPY; BEAMS; ELECTRON MICROSCOPY; INTERFERENCE; LASERS; MORPHOLOGY; RESOLUTION; SILICON; SURFACES
Descriptors DEC
ELEMENTS; HEAT TREATMENTS; MICROSCOPY; SEMIMETALS

Optional Information

Copyright
Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.