Published October 2011
| Version v1
Journal article
Surface morphology created by nanosecond laser annealing of amorphised Si layer-Investigations by complementary methods
- 1. Institute of Physics, Polish Academy of Sciences, Al. Lotnikow 32/46, PL-02 668 Warsaw (Poland)
Description
The formation of morphological structures on an amorphised Si surface by annealing with nanosecond laser pulse is studied. The resulting structures are investigated by complementary methods: interference microscopy with Nomarski contrast, atomic force microscopy and high-resolution electron microscopy. The evolution of the misfit morphological structures for variable fluence of the laser beam and for variable area of the focused laser beam is shown.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.radphyschem.2011.03.021Additional details
Identifiers
- DOI
- 10.1016/j.radphyschem.2011.03.021;
- PII
- S0969-806X(11)00131-9;
Publishing Information
- Journal Title
- Radiation Physics and Chemistry (1993)
- Journal Volume
- 80
- Journal Issue
- 10
- Journal Page Range
- p. 1031-1035
- ISSN
- 0969-806X
- CODEN
- RPCHDM
Conference
- Title
- 10. international school and symposium on synchrotron radiation in natural science (ISSRNS)
- Dates
- 6-12 Jun 2010
- Place
- Szklarska Poreba (Poland)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43059375
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; ATOMIC FORCE MICROSCOPY; BEAMS; ELECTRON MICROSCOPY; INTERFERENCE; LASERS; MORPHOLOGY; RESOLUTION; SILICON; SURFACES
- Descriptors DEC
- ELEMENTS; HEAT TREATMENTS; MICROSCOPY; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.