Parametrization of the charge-carrier mobility in organic disordered semiconductors

An appropriately parametrized analytical equation (APAE) is suggested to account for charge-carrier mobility in organic disordered semiconductors. This equation correctly reproduces the effects of temperature $T$, carrier concentration $n$, and electric field $F$ on the carrier mobility $\mu (T,F,n)$, as evidenced by comparison with analytical theories and Monte Carlo simulations. The set of material parameters responsible for charge transport is proven to be at variance with those used in the so-called extended-Gaussian-disorder-model (EGDM) approach, which is widely exploited in commercially distributed device-simulation algorithms. While the EGDM is valid only for cubic lattices with a specific choice of parameters, the APAE describes charge transport in systems with spatial disorder in a wide range of parameters. The APAE is user-friendly and, thus, suitable for incorporation into device-simulation algorithms.