Investigation of the formation of Si and SiC crystalline phases in room temperature C+ implanted Si

The dependence of crystallization of SiC and Si layers on the concentration of carbon atoms implanted into silicon was studied. For this purpose layers with a rectangular distribution of carbon atoms and with a carbon concentration in silicon ranging from 0.01 to 1.4 were obtained by means of multiple implantation. We have shown by X-ray diffraction that the formation of polycrystalline phases of Si and β-SiC occurs in various ways and depends on the carbon concentration. The obtained results are explained in terms of the effect of Si-C bonds and carbon clusters on atom diffusion in the layers. (orig.)