Effects of hydrazine on the solvothermal synthesis of Cu2ZnSnSe4 and Cu2CdSnSe4 nanocrystals for particle-based deposition of films
Creators
- 1. Department of Materials Science and Engineering, National Cheng Kung University, Tainan, Taiwan 701 (China)
- 2. Department of Greenergy, National University of Tainan, Tainan, Taiwan 700 (China)
- 3. Department of Photonics, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, Taiwan 701 (China)
Description
The effects of hydrazine on the synthesis of Cu2ZnSnSe4 (CZTSe) and Cu2CdSnSe4 (CCTSe) nanocrystals in an autoclave as a function of temperature and time were explored. On heating at 190 °C for 24-72 h, pure CZTSe and CCTSe nanocrystals could readily grow in the hydrazine-added solution, while in the hydrazine-free solution the intermediate phases such as ZnSe, Cu2Se, and Cu2SnSe3, and Cu2SnSe3 and CdSe associated with the CZTSe and CCTSe nanocrystals grew, respectively. This result reveals that hydrazine can speed up the synthesis of pure CZTSe and CCTSe nanocrystals via a solvothermal process. The mechanisms for the hydrazine-enhanced growth of CZTSe and CCTSe nanocrystals were discussed. The pure CZTSe and CCTSe nanocrystals were subsequently fabricated to the smooth films by spin coating without further annealing in selenium atmosphere. This processing may be beneficial to the fabrication of the absorber layer for solar cells and thermoelectric devices. - Highlights: • Hydrazine enhances the growth of pure Cu2ZnSnSe4 and Cu2CdSnSe4 nanocrystals. • The nanocrystals can be fabricated to films by spin coating without annealing. • This solvothermal processing is promising for the fabrication of thin film devices
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2013.03.096Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2013.03.096;
- PII
- S0040-6090(13)00556-7;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 544
- Journal Page Range
- p. 291-295
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 6. international conference on technological advances of thin films and surface coatings
- Dates
- 14-17 Jul 2012
- Place
- Singapore (Singapore)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46090323
- Subject category
- S36: MATERIALS SCIENCE; S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ANNEALING; COPPER SELENIDES; HYDRAZINE; NANOSTRUCTURES; PARTICLES; RAMAN SPECTRA; SELENIUM; SOLAR CELLS; SOLUTIONS; SYNTHESIS; TEMPERATURE DEPENDENCE; THIN FILMS; ZINC SELENIDES
- Descriptors DEC
- CHALCOGENIDES; COPPER COMPOUNDS; DIRECT ENERGY CONVERTERS; DISPERSIONS; ELEMENTS; EQUIPMENT; FILMS; HEAT TREATMENTS; HOMOGENEOUS MIXTURES; MIXTURES; NITROGEN COMPOUNDS; PHOTOELECTRIC CELLS; PHOTOVOLTAIC CELLS; SELENIDES; SELENIUM COMPOUNDS; SEMIMETALS; SOLAR EQUIPMENT; SPECTRA; TRANSITION ELEMENT COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2013 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.