Published February 7, 2007
| Version v1
Journal article
Fabrication of photonic crystal structures on light emitting diodes by nanoimprint lithography
- 1. Devices and Materials Laboratory, LG Electronics Institute of Technology, 16 Woomyeon-Dong, Seocho-Gu, Seoul 137-724 (Korea, Republic of)
- 2. Department of Materials Science and Engineering and National Research Laboratory for Nanophotonic Semiconductors, Gwangju Institute of Science and Technology (GIST), Gwangju 500-712 (Korea, Republic of)
Description
Photonic crystal (PC) structures on green light emitting diodes (LED) were successfully fabricated using nanoimprint lithography. The stamp, with a two-dimensional pillar structure, was fabricated using laser interference lithography through a double exposure technique. To achieve PC structures with a precise dimension, thermal treatment of the photoresist was employed during stamp fabrication; this proved to be effective for the control of the diameter and shape of the hole. The two-dimensional PC structures, with a period of 295 nm, diameter of 180 nm and depth of 100 nm, on the green LEDs resulted in nine-fold enhancement of the photoluminescence intensity compared to the as-deposited samples without PC structures
Additional details
Identifiers
- DOI
- 10.1088/0957-4484/18/5/055306;
- PII
- S0957-4484(07)26884-9;
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 18
- Journal Issue
- 5
- Journal Page Range
- p. 055306
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38089224
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CONTROL; CRYSTAL STRUCTURE; CRYSTALS; ELECTRIC CONDUCTIVITY; FABRICATION; HEAT TREATMENTS; HOLES; INTERFERENCE; LIGHT EMITTING DIODES; NANOSTRUCTURES; PHOTOLUMINESCENCE
- Descriptors DEC
- ELECTRICAL PROPERTIES; EMISSION; LUMINESCENCE; PHOTON EMISSION; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES