Published 1999
| Version v1
Miscellaneous
Raman and photoluminescence spectroscopy from as grown and 147 keV Ar+ ion implanted AlxGa1-xAs/GaAs
Creators
- 1. Department of Physics, University of Pretoria, Pretoria (South Africa)
Description
no abstract available
Additional details
Publishing Information
- Publisher
- Polish Academy of Sciences, Institute of Physics
- Imprint Place
- Warsaw (Poland)
- Imprint Title
- Abstracts of 28. International School on Physics of Semiconducting Compounds Jaszowiec'99
- Imprint Pagination
- 276 p.
- Journal Page Range
- p. 64-66
Conference
- Title
- 28. International School on Physics of Semiconducting Compounds Jaszowiec'99
- Dates
- 6-11 Jun 1999
- Place
- Ustron-Jaszowiec (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 32006233
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ALUMINIUM COMPOUNDS; ARGON IONS; ARSENIDES; DOSE-RESPONSE RELATIONSHIPS; ENERGY LEVELS; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; ION IMPLANTATION; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; QUANTUM MECHANICS; RAMAN SPECTRA; SUBSTRATES; THIN FILMS
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; EMISSION; FILMS; GALLIUM COMPOUNDS; IONS; LUMINESCENCE; MECHANICS; PHOTON EMISSION; PNICTIDES; RADIATION EFFECTS; SPECTRA
Optional Information
- Notes
- 5 refs, 2 figs