Optical simulation of single-event upsets in silicon devices

Single-event upsets in integrated circuits are caused by single energetic charged particles of cosmic or radioactive origin, which leave a trail of free charges in the semiconducting material. Most commonly, an integrated circuit is tested for sensitivity to single-event upset using particle accelerators. Other more economical means can be used to generate trails of free charges and thereby simulate the passage of a charged particle. Simulation using focused light pulses is reported here. The theory for optical simulation in silicon devices was developed. With it, a diffraction-limited experimental system was implemented and tested for performance. Two preliminary experiments were performed on photosensors. The principal experimental results were compared with data obtained from accelerated particles. Experimental results on bipolar memories and power field-effect transistors, using these diverse testing methods, are found to be in good agreement when reasonable assumptions are made