Published January 2011 | Version v1
Journal article

Electrical Characteristics of High-Performance ZnO Field-Effect Transistors Prepared by Ultrasonic Spray Pyrolysis Technique

  • 1. Key Laboratory for Organic Electronics and Information Displays and Institute of Advanced Materials, Nanjing University of Posts and Telecommunications, Nanjing 210046 (China)
  • 2. State Key Laboratory of Polymer Physics and Chemistry, Changchun Institute of Applied Chemistry, Graduate School of the Chinese Academy of Sciences, Chinese Academy of Sciences, Changchun 130022 (China)

Description

We have fabricated ZnO-based thin-film transistors (TFTs) by low-cost ultrasonic spray pyrolysis. The devices exhibit high saturation mobility of about 0.6 cm2/Vs and on-off current ratio of 105. The electrical characteristics of ZnO-based TFTs show that ultrasonic spray pyrolysis technique can be used as a promising approach to attain high-performance electronic devices. Furthermore, the deposition techniques make the operating process attractive for flexible electronics. (condensed matter: electronic structure, electrical, magnetic, and optical properties)

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/28/1/017302

Additional details

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
28
Journal Issue
1
Journal Page Range
[3 p.]
ISSN
0256-307X
CODEN
CPLEEU