Published August 2005 | Version v1
Journal article

Effect of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering

  • 1. Laboratorio Nacional de Luz Sincrotron, Caixa Postal 6192, CEP 13084-971 Campinas-SP (Brazil)
  • 2. Faculdade de Ciencias, UNESP, Bauru-SP, CEP 17033-360 (Brazil)
  • 3. Centro de Ciencia e Ingenieria de Materiales (CICIMA), Universidad de Costa Rica, 2060 San Jose (Costa Rica)

Description

We have utilized infra-red and optical absorption measurements, grazing incidence X-ray diffraction (GIXRD) and extended X-ray absorption fine structure (EXAFS) measurements to investigate the influence of hydrogenation on the optical and structural properties of GaAs thin films prepared by rf-magnetron sputtering. Hydrogenation induces distinct changes in the optical properties, namely shifts in the absorption edges and reduction of the Urbach energy. Such modifications are correlated to a reduction in structural disorder as determined by EXAFS and the increase of crystallinity determined by GIXRD

Additional details

Identifiers

DOI
10.1016/j.nimb.2005.06.071;
PII
S0168-583X(05)01018-9;

Publishing Information

Journal Title
Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
Journal Volume
238
Journal Issue
1-4
Journal Page Range
p. 329-333
ISSN
0168-583X
CODEN
NIMBEU

Conference

Title
4. conference on synchrotron radiation in materials science
Dates
23-25 Aug 2004
Place
Grenoble (France)

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.