Analysis of interatomic distances of transition metal-silicon and chemical bond types in transition metal binary silicides

Changes in M-Si interatomic distance rates in crystal structures depending on M element type where M - Zr, Nb, Hf, Ta, Mo, W, etc type are studied. It is shown that increase in silicon content in the combinations increases the state density in the low-energy section, whereas the increase in the transition metal content increases the state density in the high-energy section of the valency zone. Changes in the density of states constitute the cause of existing certain-type chemical bonds between the M-Si atoms and its change in the series of the M3Si, M5Si3, MS and MSi2 combinations from purely metallic to metallic one with sufficient ratio of covalent ingredient.13 refs., 2 tabs