Published November 2016
| Version v1
Journal article
On the crystal structure and thermoelectric properties of thin Si1–xMnx films
Creators
- 1. Lobachevsky State University of Nizhny Novgorod, Research Institute for Physics and Technology (Russian Federation)
Description
Thin (25 nm) Si1–xMnx/Si(100) films are fabricated by pulsed laser deposition. According to high-resolution transmission electron microscopy data, the films have a nanotextured crystalline structure and are chemically homogeneous. The temperature dependences of the resistivity and thermopower are measured in the range of 300–500 K, and the temperature dependences of the Seebeck coefficient and power factor are calculated.
Additional details
Identifiers
Publishing Information
- Journal Title
- Semiconductors
- Journal Volume
- 50
- Journal Issue
- 11
- Journal Page Range
- p. 1453-1457
- ISSN
- 1063-7826
- CODEN
- SMICES
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 48098330
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CONCENTRATION RATIO; CRYSTAL STRUCTURE; CRYSTALS; ENERGY BEAM DEPOSITION; LASER RADIATION; MANGANESE; POWER FACTOR; PULSED IRRADIATION; SILICON; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K; TEMPERATURE RANGE 0400-1000 K; THERMOELECTRIC PROPERTIES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- DEPOSITION; DIMENSIONLESS NUMBERS; ELECTRICAL PROPERTIES; ELECTROMAGNETIC RADIATION; ELECTRON MICROSCOPY; ELEMENTS; FILMS; IRRADIATION; METALS; MICROSCOPY; PHYSICAL PROPERTIES; RADIATIONS; SEMIMETALS; SURFACE COATING; TEMPERATURE RANGE; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2016 Pleiades Publishing, Ltd.