Published June 1, 2009
| Version v1
Journal article
Robustness aware high performance high fan-in domino OR logic design
- 1. College of Electronic and Informational Engineering, Hebei University, Baoding 071002 (China)
- 2. VLSI and System Laboratory, Beijing University of Technology, Beijing 100022 (China)
Description
A novel technique using a keeper with a simultaneous low supply voltage and low body voltage is proposed to improve the overall performance of high fan-in OR gates without modifying the physical dimensions of the keeper. Simulation results of a 16-input domino OR gate using 45 nm CMOS technology show that the proposed technique could trade off between a high power/speed efficient operation and the robustness to noise effectively. Also, a Monte Carlo analysis indicates that the proposed domino OR gate is more robust to parameter variation compared to a conventional domino OR gate.
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-4926/30/6/065005Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Semiconductors
- Journal Volume
- 30
- Journal Issue
- 6
- Journal Page Range
- [4 p.]
- ISSN
- 1674-4926
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41079161
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
- Descriptors DEI
- BLOWERS; DESIGN; ELECTRIC POTENTIAL; MONTE CARLO METHOD; NOISE; OPERATION; PERFORMANCE; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SIMULATION
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; MATERIALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS