Published June 1, 2009 | Version v1
Journal article

Robustness aware high performance high fan-in domino OR logic design

  • 1. College of Electronic and Informational Engineering, Hebei University, Baoding 071002 (China)
  • 2. VLSI and System Laboratory, Beijing University of Technology, Beijing 100022 (China)

Description

A novel technique using a keeper with a simultaneous low supply voltage and low body voltage is proposed to improve the overall performance of high fan-in OR gates without modifying the physical dimensions of the keeper. Simulation results of a 16-input domino OR gate using 45 nm CMOS technology show that the proposed technique could trade off between a high power/speed efficient operation and the robustness to noise effectively. Also, a Monte Carlo analysis indicates that the proposed domino OR gate is more robust to parameter variation compared to a conventional domino OR gate.

Availability note (English)

Available from http://dx.doi.org/10.1088/1674-4926/30/6/065005

Additional details

Publishing Information

Journal Title
Journal of Semiconductors
Journal Volume
30
Journal Issue
6
Journal Page Range
[4 p.]
ISSN
1674-4926

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41079161
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; S36: MATERIALS SCIENCE;
Descriptors DEI
BLOWERS; DESIGN; ELECTRIC POTENTIAL; MONTE CARLO METHOD; NOISE; OPERATION; PERFORMANCE; SEMICONDUCTOR MATERIALS; SILICON OXIDES; SIMULATION
Descriptors DEC
CALCULATION METHODS; CHALCOGENIDES; MATERIALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS