Published November 2008
| Version v1
Journal article
Thickness distribution of thin amorphous chalcogenide films prepared by pulsed laser deposition
- 1. University of Pardubice, Research Centre Advanced Inorganic Materials, Faculty of Chemical Technology, Pardubice (Czech Republic)
- 2. University of Pardubice, Department of General and Inorganic Chemistry, Faculty of Chemical Technology, Pardubice (Czech Republic)
Description
Amorphous chalcogenide thin films were prepared from As2Se3, As3Se2 and InSe bulk glasses by pulsed laser deposition using a KrF excimer laser. Thickness profiles of the films were determined using variable angle spectroscopic ellipsometry. The influence of the laser beam scanning process during the deposition on the thickness distribution of the prepared thin films was evaluated and the corresponding equations suggested. The results were compared with experimental data. (orig.)
Availability note (English)
Available from: http://dx.doi.org/10.1007/s00339-008-4687-8Additional details
Identifiers
Publishing Information
- Journal Title
- Applied Physics. A, Materials Science and Processing
- Journal Volume
- 93
- Journal Issue
- 3
- Series
- Special issue: ''Materials growth by pulsed laser deposition''
- Journal Page Range
- p. 617-620
- ISSN
- 0947-8396
- CODEN
- APAMFC
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 39118858
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AMORPHOUS STATE; ARSENIC SELENIDES; DEPOSITION; ELLIPSOMETRY; EQUATIONS; INDIUM SELENIDES; LASER BEAM MACHINING; LASER RADIATION; PULSED IRRADIATION; SPATIAL DISTRIBUTION; THICKNESS; THIN FILMS
- Descriptors DEC
- ARSENIC COMPOUNDS; CHALCOGENIDES; DIMENSIONS; DISTRIBUTION; ELECTROMAGNETIC RADIATION; FILMS; INDIUM COMPOUNDS; IRRADIATION; MACHINING; MEASURING METHODS; RADIATIONS; SELENIDES; SELENIUM COMPOUNDS