Published October 1, 1999
| Version v1
Journal article
Radiation damage studies of multi-guard ring p-type bulk diodes
Description
Several diodes with different multi-guard ring structures were fabricated from 10 kΩ cm p-type bulk material. Studies on the performance of such devices are presented here. They include the measurement of the leakage current, breakdown voltage and charge collection efficiency before and after 2x1014 p/cm2 irradiation with 63.3 MeV kinetic protons. (author)
Additional details
Identifiers
- PII
- S0168900299004386;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 435
- Journal Issue
- 1-2
- Journal Page Range
- p. 178-186
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- India
- INIS RN
- 34042968
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- BREAKDOWN; CHARGE COLLECTION; EFFICIENCY; ELECTRIC POTENTIAL; IRRADIATION; LEAKAGE CURRENT; MEV RANGE 10-100; P-N JUNCTIONS; PROTONS; RADIATION EFFECTS; SEMICONDUCTOR DIODES
- Descriptors DEC
- BARYONS; CURRENTS; ELECTRIC CURRENTS; ELEMENTARY PARTICLES; ENERGY RANGE; FERMIONS; HADRONS; MEV RANGE; NUCLEONS; SEMICONDUCTOR DEVICES; SEMICONDUCTOR JUNCTIONS
Optional Information
- Copyright
- Copyright (c) 1999 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.