Published August 2014 | Version v1
Journal article

Development of personal dosimeter based on silicon semiconductor detector

  • 1. China Institute for Radiation Protection, Taiyuan (China)
  • 2. China Institute of Atomic Energy, Beijing (China)

Description

The working principles of silicon semiconductor detector dosimeter were briefly introduced in this paper. And the dosimeter was designed by using measurement principles of X, γ ray for silicon photoelectric diode with novel data processing algorithm. The characteristics of the device have been tested in national radiation measurement station of China Institute of Atomic Energy (CIAE). The test results are as follows: dose-rate range is from 0.1 μSv/h to 1 Sv/h; dose-rate inherent error range is from -15% to +4.7%; the cumulative dose inherent error range is from -11% to +5.7%; angle response error of vertical and horizontal direction were -19%∼+4% (vertical direction) and -20%∼-2% (horizontal direction) respectively; compared with 137Cs in the 60 keV to 1.332 MeV range, the energy response error is -22%∼+0.4%. And the measurement results are in accordance with the requirements of national standard JJG1009-2006. (authors)

Additional details

Publishing Information

Journal Title
Nuclear Electronics and Detection Technology
Journal Volume
34
Journal Issue
8
Journal Page Range
p. 1020-1023
ISSN
0258-0934

Optional Information

Notes
7 figs., 10 refs.