Published October 2007
| Version v1
Journal article
Square-wave switching by crossed-polarization gain modulation in vertical-cavity semiconductor lasers
Creators
- 1. Institut Mediterrani d'Estudis Avancats, CSIC UIB, E-07071 Palma de Mallorca (Spain)
Description
We study experimentally and theoretically the effects of crossed-polarization reinjection (XPR) on the output characteristics of a vertical-cavity semiconductor laser. We find a set of parameters values for which each polarization component develops a square-wave modulation at a period close to twice the reinjection delay. We analyze the regularity of this modulation in terms of the laser pumping current and of the reinjection level. These observations are numerically reproduced within the spin-flip model modified to account for XPR. In particular, the degradation of the square-wave switching is linked to the finite value of the spin-flip rate, and it occurs when the current approaches the boundaries of polarization bistability
Additional details
Identifiers
Publishing Information
- Journal Title
- Physical Review. A
- Journal Volume
- 76
- Journal Issue
- 4
- Journal Page Range
- p. 043801-043801.10
- ISSN
- 1050-2947
- CODEN
- PLRAAN
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 39042595
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- CURRENTS; MODULATION; POLARIZATION; PULSES; SEMICONDUCTOR LASERS; SPIN FLIP; SURFACES; SWITCHES
- Descriptors DEC
- ELECTRICAL EQUIPMENT; EQUIPMENT; LASERS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS
Optional Information
- Notes
- (c) 2007 The American Physical Society