Published October 2007 | Version v1
Journal article

Square-wave switching by crossed-polarization gain modulation in vertical-cavity semiconductor lasers

  • 1. Institut Mediterrani d'Estudis Avancats, CSIC UIB, E-07071 Palma de Mallorca (Spain)

Description

We study experimentally and theoretically the effects of crossed-polarization reinjection (XPR) on the output characteristics of a vertical-cavity semiconductor laser. We find a set of parameters values for which each polarization component develops a square-wave modulation at a period close to twice the reinjection delay. We analyze the regularity of this modulation in terms of the laser pumping current and of the reinjection level. These observations are numerically reproduced within the spin-flip model modified to account for XPR. In particular, the degradation of the square-wave switching is linked to the finite value of the spin-flip rate, and it occurs when the current approaches the boundaries of polarization bistability

Additional details

Identifiers

Publishing Information

Journal Title
Physical Review. A
Journal Volume
76
Journal Issue
4
Journal Page Range
p. 043801-043801.10
ISSN
1050-2947
CODEN
PLRAAN

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
39042595
Subject category
S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
CURRENTS; MODULATION; POLARIZATION; PULSES; SEMICONDUCTOR LASERS; SPIN FLIP; SURFACES; SWITCHES
Descriptors DEC
ELECTRICAL EQUIPMENT; EQUIPMENT; LASERS; SEMICONDUCTOR DEVICES; SOLID STATE LASERS

Optional Information

Notes
(c) 2007 The American Physical Society