Refractoriness of high-current and low acceleration voltage arsenic-ion implanted polycrystalline silicon against fluorine chemistry

The author observed that both high current ion beam and low-acceleration voltage arsenic implanted polycrystalline silicon film surfaces are resistant to radical-fluorine gas etching. If they accept the simple assumption that a depth profile of concentration distribution of the implanted high dose As atoms in polycrystalline Si film can be expressed with a standardized distribution function in the previous report of S.Furukawa, H.Matsumura, and H.Ishiwara, they can take the premise that the chemical bonding reaction itself between radical fluorine atoms and silicon atoms is prevented rather than that the covering of an arsenic metal thin layer like amorphous state prevents the chemical bonding reaction. They present a model of the prevention Si-F bond formation by high dose arsenic implantation at low acceleration voltage. The model seems to be related to potential barrier increase and lattice vibration suppression for electromagnetic force-phonon interaction