Published November 30, 2009
| Version v1
Journal article
Impact of ZnTe buffer on the electrical properties of n-type GaSb:Te films
Creators
- 1. Department of Nano-Semiconductor, Korea Maritime University, Busan 606-791 (Korea, Republic of)
- 2. Division of Mechatronics Engineering, Korea Maritime University, Busan 606-791 (Korea, Republic of)
- 3. Faculty of Energy Resources Engineering, Jungwon University, Goesan 367-805 (Korea, Republic of)
- 4. Neosemitech, Incheon 406-840 (Korea, Republic of)
- 5. Department of Defense Science and Technology, Hoseo University, Asan 336-795 (Korea, Republic of)
- 6. Center for Interdisciplinary Research, Tohoku University, Sendai 980-8577 (Japan)
Description
We have investigated on the molecular beam epitaxy (MBE) of Te-doped GaSb films on ZnTe buffer. Te-doped GaSb (GaSb:Te) films with and without ZnTe buffer were grown on (0 0 1) GaAs substrates. GaSb:Te/ZnTe/GaAs film revealed higher mobility (=631 cm2/V s) in comparison to GaSb:Te/GaAs film (=249 cm2/V s). To explain the higher mobility of GaSb:Te on ZnTe buffer, dislocation density and temperature dependence of Hall measurement results were analyzed. Temperature dependence of Hall measurement shows strong influence of the dislocation scattering, which indicates that dislocation reduction by the ZnTe buffer enhances the carrier mobility of GaSb films.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2009.05.159Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2009.05.159;
- PII
- S0169-4332(09)00733-8;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 256
- Journal Issue
- 4
- Journal Page Range
- p. 1261-1264
- ISSN
- 0169-4332
- CODEN
- ASUSEE
Conference
- Title
- 4. vacuum and surface sciences conference of Asia and Australia
- Acronym
- VASSCAA-4
- Dates
- 28-31 Oct 2008
- Place
- Matsue (Japan)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44018349
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CARRIER MOBILITY; DENSITY; DOPED MATERIALS; FILMS; GALLIUM ANTIMONIDES; GALLIUM ARSENIDES; HALL EFFECT; MOLECULAR BEAM EPITAXY; SCATTERING; SUBSTRATES; TELLURIUM ADDITIONS; TEMPERATURE DEPENDENCE; ZINC TELLURIDES
- Descriptors DEC
- ALLOYS; ANTIMONIDES; ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CHALCOGENIDES; CRYSTAL GROWTH METHODS; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; MOBILITY; PHYSICAL PROPERTIES; PNICTIDES; TELLURIDES; TELLURIUM ALLOYS; TELLURIUM COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.