Published June 1993 | Version v1
Journal article Metadata-only

Photocells on the basis of p-GaSe/n-InSe epitaxial heterojunction with extremely dispersed bipolar spectral characteristics

Creators

  • 1. AN Azerbajdzhanskoj SSR, Baku (Azerbaijan). Inst. Fiziki

Description

Processes in epitaxial heterojunctions p-GaSe/n-InSe used in photoelements with extremely dispersed bipolar spectral characteristic were considered

Additional details

Additional titles

Original title (Russian)
Фотоэлементы на основе эпитаксиального гетероперехода p-GaSe/n-InSe с резкодисперсной биполярной спектральной характеристикой

Publishing Information

Journal Title
Neorganicheskie Materialy
Journal Volume
29
Journal Issue
6
Journal Page Range
p. 781-784.
ISSN
0002-337X
CODEN
NEOMB8

INIS

Country of Publication
Russian Federation
Country of Input or Organization
Russian Federation
INIS RN
26020197
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
CRYSTAL STRUCTURE; EPITAXY; GALLIUM SELENIDES; HETEROJUNCTIONS; INDIUM SELENIDES; PHOTOELECTRIC CELLS; SPECTRA
Descriptors DEC
CHALCOGENIDES; CRYSTAL GROWTH METHODS; DIRECT ENERGY CONVERTERS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; SELENIDES; SELENIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS