Published 1999 | Version v1
Journal article

Plasma transfer and technology of ion plasma etching

  • 1. Scientific and Technological Centre of Space and Engines, Kharkov Aviation Institute, Kharkov (Ukraine)

Description

Technological process of ion plasma etching (IPE) is working out according to the idea about of elementary process which take place on the treatment surface. The principal mechanism of interaction between bombardment ions and atoms of surface is the process of transfer of impulse during spring collisions of displacement atoms. The final result of atom collisions may consist in what surface atoms will receive sufficient impulse and energy for extracting its from etching surface of material

Additional details

Publishing Information

Journal Title
Problems of Atomic Science and Technology. Series: Plasma Physics
Journal Volume
3,4
Journal Issue
3,4
Journal Page Range
p. 262-264
ISSN
1682-9344

Conference

Title
6. Ukrainian Conference on Plasma Physics and Controlled Fusion
Dates
14-20 Sep 1998
Place
Alushta (Ukraine)

INIS

Country of Publication
Ukraine
Country of Input or Organization
Ukraine
INIS RN
33013191
Subject category
S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ETCHING; ION BEAMS; ION SOURCES; MATERIALS TESTING; SILICON CARBIDES; TUNGSTEN CARBIDES; XENON IONS
Descriptors DEC
BEAMS; CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; IONS; REFRACTORY METAL COMPOUNDS; SILICON COMPOUNDS; SURFACE FINISHING; TESTING; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS