Published 1999
| Version v1
Journal article
Plasma transfer and technology of ion plasma etching
- 1. Scientific and Technological Centre of Space and Engines, Kharkov Aviation Institute, Kharkov (Ukraine)
Description
Technological process of ion plasma etching (IPE) is working out according to the idea about of elementary process which take place on the treatment surface. The principal mechanism of interaction between bombardment ions and atoms of surface is the process of transfer of impulse during spring collisions of displacement atoms. The final result of atom collisions may consist in what surface atoms will receive sufficient impulse and energy for extracting its from etching surface of material
Additional details
Publishing Information
- Journal Title
- Problems of Atomic Science and Technology. Series: Plasma Physics
- Journal Volume
- 3,4
- Journal Issue
- 3,4
- Journal Page Range
- p. 262-264
- ISSN
- 1682-9344
Conference
- Title
- 6. Ukrainian Conference on Plasma Physics and Controlled Fusion
- Dates
- 14-20 Sep 1998
- Place
- Alushta (Ukraine)
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 33013191
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ETCHING; ION BEAMS; ION SOURCES; MATERIALS TESTING; SILICON CARBIDES; TUNGSTEN CARBIDES; XENON IONS
- Descriptors DEC
- BEAMS; CARBIDES; CARBON COMPOUNDS; CHARGED PARTICLES; IONS; REFRACTORY METAL COMPOUNDS; SILICON COMPOUNDS; SURFACE FINISHING; TESTING; TRANSITION ELEMENT COMPOUNDS; TUNGSTEN COMPOUNDS