The influence of electron irradiation on avalanche breakdown voltage of silicon p-n junctions at 4.2-80 K

The influence of irradiation by electrons with energy 4 MeV on temperature dependencies of avalanche breakdown voltage of silicon p-n junctions have been investigated in the range of temperatures 4.2-80 K. At initial and irradiated p-n junctions the segments with non monotonic temperature dependence of breakdown voltage are detected at 4.2-40 K, and also barrier capacity and conductivity at 22-65 K, stipulated by freezing of carriers on shallow impurity centers in quasi neutral areas. Thus is established, that the introduction of radiation defects results in increase of a temperature coefficient of a breakdown voltage at 17-35 K, displacement of a maximum of conductivity and a segment of sharp decreasing of a capacity at 22-35 K to the field of higher temperatures. It is connected with influence of a degree of compensation n-area on low temperature conductivity of silicon