Published January 2004
| Version v1
Journal article
Optical characterization of delta-doped GaAs superlattices
Creators
- 1. Nauchno-Issledovatel'skij Fiziko-Tekhnicheskij Inst. Nizhegorodskogo Gosudarstvennogo Univ. im. N.I. Lobachevskogo, Nizhnij Novgorod (Russian Federation)
- 2. RAN, Inst. Fiziki Mikrostruktur, Nizhnij Novgorod (Russian Federation)
- 3. NAN Belarusi, Inst. Fiziki im. B.I. Stepanova, Minsk (Belarus)
- 4. Univ. Pretorii, Pretoriya (South Africa)
Description
The arsenide gallium small period (less than 20 nm) superlattices, or the n-i-p-i-structures, grown through the gas phase epitaxy method with application of the metalloorganic compounds, are studied. The Se and C were used for alloying. Obviously expressed peculiarities, corresponding to various transitions between the electrons and holes dimensional quantization in the n- and p-areas were identified by studying the low-temperature photoluminescence (4.2 K)
Abstract (Russian)
Исследованы арсенид-галлиевые сверхрешетки с малым периодом (менее 20 нм), или n-i-p-i-структуры, выращенные методом газофазной эпитаксии с применением металлоорганических соединений. Для легирования использованы Se и C. При изучении низкотемпературной фотолюминесценции (4.2 К) обнаружены ярко выраженные особенности, соответствующие различным переходам между уровнями размерного квантования электронов и дырок в n- и p-областяхAdditional details
Additional titles
- Original title (Russian)
- Оптические характеристики дельта-легированных сверхрешеток GaAs
Publishing Information
- Journal Title
- Izvestiya Akademii Nauk. Rossijskaya Akademiya Nauk. Seriya Fizicheskaya
- Journal Volume
- 68
- Journal Issue
- 1
- Journal Page Range
- p. 84-86
- ISSN
- 1026-3489
- CODEN
- IRAFEO
Conference
- Title
- Nanophotonics
- Original Conference Title
- Mezhdunarodnoe soveshchanie: Nanofotonika
- Acronym
- International workshop
- Dates
- Mar 2003
- Place
- Nizhnij Novgorod (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 37027369
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CARBON ADDITIONS; DOPED MATERIALS; EMISSION SPECTRA; GALLIUM ARSENIDES; HETEROJUNCTIONS; PHOTOLUMINESCENCE; SELENIUM ADDITIONS; SUPERLATTICES; TEMPERATURE RANGE 0065-0273 K; VAPOR PHASE EPITAXY
- Descriptors DEC
- ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; LUMINESCENCE; MATERIALS; PHOTON EMISSION; PNICTIDES; SELENIUM ALLOYS; SEMICONDUCTOR JUNCTIONS; SPECTRA; TEMPERATURE RANGE
Optional Information
- Notes
- 6 refs., 4 figs.