Fabrication of arrays of tapered silicon micro-/nano-pillars by metal-assisted chemical etching and anisotropic wet etching
Creators
- 1. School of Fundamental Science and Technology, Keio University, Yokohama 223-8522 (Japan)
Description
Fabrication of a 2D square lattice array of intentionally tapered micro-/nano-silicon pillars by metal-assisted chemical etching (MACE) of silicon wafers is reported. The pillars are square rod shaped with the cross-sections in the range 0.2 × 0.2–0.9 × 0.9 μm2 and heights 3–7 μm. The spacing between pillars in the 2D square lattice was controlled between 0.5 and 3.0 μm. While the pillars after MACE had the high aspect ratio ∼1:5, subsequent anisotropic wet etching in potassium hydroxide solution led to 80°–89.5° tapers with smooth sidewalls. The resulting taper angle showed the relation with geometry of pillar structures; the spacing 0.5–3.0 μm led to the tapering angle 89.5°–80° for 3 and 5 μm tall pillars but 7 μm tall pillars showed no dependency between the tapering angle and the inter-pillar spacing. Such an array of silicon tapered-rods with smooth sidewalls is expected to be applicable as a mold in nanoimprinting applications. (letter)
Availability note (English)
Available from http://dx.doi.org/10.1088/1361-6528/aac04bAdditional details
Identifiers
Publishing Information
- Journal Title
- Nanotechnology (Print)
- Journal Volume
- 29
- Journal Issue
- 28
- Journal Page Range
- [9 p.]
- ISSN
- 0957-4484
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51058093
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ANISOTROPY; ASPECT RATIO; ETCHING; FABRICATION; METALS; POTASSIUM HYDROXIDES; RODS; SILICON; TETRAGONAL LATTICES
- Descriptors DEC
- ALKALI METAL COMPOUNDS; CRYSTAL LATTICES; CRYSTAL STRUCTURE; DIMENSIONLESS NUMBERS; ELEMENTS; HYDROGEN COMPOUNDS; HYDROXIDES; OXYGEN COMPOUNDS; POTASSIUM COMPOUNDS; SEMIMETALS; SURFACE FINISHING; THREE-DIMENSIONAL LATTICES