Published 1981
| Version v1
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Radiation of 1q GeV positrons channeling in silicon monocrystal
Description
The radiation accompanying the 10 GeV positron planar channeling in a perfect silicon single crystal has been measured. This radiation is found to be narrowly peaked in angular and energy distributions
Availability note (English)
MF available from INIS under the Report Number.Files
13687802.pdf
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Additional details
Additional titles
- Original title (Russian)
- Излучение позитронов с энергией 10 ГэВ в монокристалле кремния в процессе каналирования
Publishing Information
- Imprint Pagination
- 7 p.
- Report number
- JINR-D--1-81-592
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 13687802
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANGULAR DISTRIBUTION; GAMMA SPECTRA; GEV RANGE 01-10; MONOCRYSTALS; POSITRON CHANNELING; SILICON
- Descriptors DEC
- CHANNELING; CRYSTALS; DISTRIBUTION; ELEMENTS; ENERGY RANGE; GEV RANGE; SEMIMETALS; SPECTRA
Optional Information
- Notes
- 5 refs.; 3 figs.; submitted to the journal JETP Lett.