Published May 2017 | Version v1
Journal article

Infrared spectroscopy techniques for studying the electronic structures of materials under high pressure

  • 1. Tokushima University, Graduate School of Science and Technology, Tokushima (Japan)
  • 2. Japan Synchrotron Radiation Research Institute (JASRI/SPring-8), Sayo, Hyogo (Japan)
  • 3. Kobe University, Graduate School of Science, Kobe, Hyogo (Japan)

Description

In this article, we describe our high-pressure infrared (IR) spectroscopy techniques for studying the electronic structures of materials at high pressures. High pressure of up to 20 GPa is applied to a sample using a diamond anvil cell (DAC). To accurately perform IR spectroscopy in the limited sample space of a DAC, synchrotron radiation is used as a bright IR source. Our techniques allow reflectance studies of a single crystal sample and determination of the optical functions of the sample such as dielectric function and optical conductivity. To illustrate the capability and usefulness of our techniques, some actual results of high-pressure IR studies on rare-earth compounds are described. (author)

Availability note (English)

Available from http://dx.doi.org/10.7567/JJAP.56.05FA11

Additional details

Identifiers

Publishing Information

Journal Title
Japanese Journal of Applied Physics (Online)
Journal Volume
56
Journal Issue
5S3
Journal Page Range
p. 05FA11.1-05FA11.8
ISSN
1347-4065

Conference

Title
17. international conference on high pressure in semiconductor physics; WHS: Workshop on high-pressure study on superconducting
Acronym
HPSP-17
Dates
7-11 Aug 2016
Place
Tokyo (Japan)

Optional Information

Notes
39 refs., 10 figs.