Bending of silicon plate crystals through superficial grooving: Modeling and experimentation
Creators
Description
Permanent and reproducible deformation of silicon mono-crystals has been experimentally attained by mechanical grooving of one of its surfaces. The method produces uniform deformation that can be controlled by proper choice of the parameters of grooving. The strain in silicon plates was modeled analytically in terms of a superficial compression occurring in the material between the grooves. The superficial grooved region acts as if it were like a tensile film with the strain propagating deep into the bulk, which results in spherical and homogeneous curvature of the whole crystal plate. Thereby, the classic Stoney's formula was reconsidered and adapted for explanation of the experimental behavior. Minimum radius of curvature experimentally achieved was about 3 m. Curved crystals are the basis for many applications, e.g. for x-ray optics to manipulate high energy photons for the construction of very sensitive instruments for x-ray astronomy.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2011.09.005Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2011.09.005;
- PII
- S0040-6090(11)01618-X;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 520
- Journal Issue
- 3
- Journal Page Range
- p. 1069-1073
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 7. international workshop on semiconductor gas sensors
- Dates
- 12-16 Sep 2010
- Place
- Krakow (Poland)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43108539
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BENDING; CRYSTALS; FILMS; MECHANICAL PROPERTIES; SILICON; SIMULATION; STRAINS; SURFACES; X RADIATION
- Descriptors DEC
- DEFORMATION; ELECTROMAGNETIC RADIATION; ELEMENTS; IONIZING RADIATIONS; RADIATIONS; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2011 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.