Aluminium nitride films prepared by low energy reactive sputtering

Aluminium nitride thin films 150-360 nm thick were deposited by reactive sputtering in an Ar-N2 atmosphere onto quartz or Corning 7059 glass substrates at the temperatures of 523-623 K. The crystalline structure of the layers, which determines their electrical properties, to a great extend depends on the nitrogen content and the substrate temperature during sputtering. The main electrical properties i. e. capacitance, conductance, loss tangent and breakdown voltage are determined for Me-AlN-Al structures with AlN films which were formed under various conditions. (author)