Published 2007
| Version v1
Journal article
Growth and characterization of thin films of ZnO and ZnMnO by ALE
- 1. Institute of Physics, Polish Academy of Sciences, Warsaw (Poland)
Description
We discuss growth of thin films of ZnO by atomic layer epitaxy (ALE), often referred to as atomic layer deposition (ALD). Properties of ZnO and ZnMnO films are studied with several characterization techniques, including X-ray diffraction (XRD), atomic force microscopy (AFM) and cathodoluminescence (CL). (author)
Additional details
Publishing Information
- Journal Title
- Tishreen University Journal for Studies and Scientific Research
- Journal Volume
- 29
- Journal Issue
- 2
- Journal Page Range
- p. 15-20
- CODEN
- TUJOEY
Conference
- Title
- 2. workshop on physics of semiconductor sciences
- Dates
- 24-26 Apr 2005
- Place
- Latakia (Syrian Arab Republic)
INIS
- Country of Publication
- Syrian Arab Republic
- Country of Input or Organization
- Syrian Arab Republic
- INIS RN
- 38064809
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ATOMIC FORCE MICROSCOPY; CATHODOLUMINESCENCE; CRYSTAL GROWTH; DEPOSITION; MANGANESE OXIDES; MOLECULAR BEAM EPITAXY; THIN FILMS; X-RAY DIFFRACTION; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EMISSION; EPITAXY; FILMS; LUMINESCENCE; MANGANESE COMPOUNDS; MICROSCOPY; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; SCATTERING; TRANSITION ELEMENT COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Notes
- 5 figs.