Published 1973
| Version v1
Book
Chemical vapor deposition of tungsten for semiconductor metallization
- 1. Bell Labs., Murray Hill, NJ
Description
Properties of CVD tungsten films produced by H2 reduction of the hexafluoride or hexachloride were investigated for suitability for use as Si integrated circuit metallizations. Adhesion, orientation, stress, and electric properties were measured. Excellent, low-resistance ohmic contacts were made to highly doped Si. The MOS characteristics of W/SiO2/Si structures were measured; they were nearly ideal when the hexachloride was used (MOS dots from the hexafluoride were usually shorted or leaky). (U.S.)
Additional details
Publishing Information
- Publisher
- Electrochemical Society, Inc.
- Imprint Place
- Princeton, NJ
- Imprint Title
- Chemical vapor deposition
- Imprint Pagination
- p. 245-246.
Conference
- Title
- 4. international conference on chemical deposition vapor.
- Dates
- 7 Oct 1973.
- Place
- Boston, Massachusetts, USA.
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 6212703
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CHEMICAL VAPOR DEPOSITION; DOPED MATERIALS; ELECTRIC CONTACTS; FABRICATION; FILMS; MOS TRANSISTORS; SILICON; TUNGSTEN; TUNGSTEN CHLORIDES; TUNGSTEN FLUORIDES
- Descriptors DEC
- CHEMICAL COATING; CHLORIDES; CHLORINE COMPOUNDS; DEPOSITION; ELECTRICAL EQUIPMENT; ELEMENTS; FLUORIDES; FLUORINE COMPOUNDS; HALIDES; HALOGEN COMPOUNDS; METALS; SEMICONDUCTOR DEVICES; SEMIMETALS; SURFACE COATING; TRANSISTORS; TRANSITION ELEMENT COMPOUNDS; TRANSITION ELEMENTS; TUNGSTEN COMPOUNDS
Optional Information
- Notes
- Imprint:See CONF-731017--.