Published January 1992
| Version v1
Journal article
Study of point defect clusters in hydrogen implanted silicon by X-ray diffuse scattering
Description
Huang diffuse scattering was used to study the annealing behaviour of vacancies and interstitials produced by different types of hydrogen implantation. The results show the presence of point defect clusters with an anisotropic strain field. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B
- Journal Volume
- 62
- Journal Issue
- 4
- Series
- Nucl. Instrum. Methods Phys. Res., Sect. B.
- Journal Page Range
- 478-483
- ISSN
- 0168-583X
- CODEN
- NIMBE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 23052921
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANISOTROPY; ANNEALING; COMPUTERIZED SIMULATION; CRYSTAL DEFECTS; HYDROGEN IONS 1 PLUS; INTERSTITIALS; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; POINT DEFECTS; SILICON; STRAINS; VACANCIES; X-RAY DIFFRACTION
- Descriptors DEC
- CATIONS; CHARGED PARTICLES; COHERENT SCATTERING; CRYSTAL STRUCTURE; DIFFRACTION; ELEMENTS; HEAT TREATMENTS; HYDROGEN IONS; IONS; RADIATION EFFECTS; SCATTERING; SEMIMETALS; SIMULATION