Published February 2001
| Version v1
Journal article
Interaction effects in arrays of Ge/Si quantum dots
Creators
- 1. Novosibirskij Gosudarstvennyj Univ., Novosibirsk (Russian Federation)
- 2. Inst. Fiziki Poluprovodnikov SO RAN, Novosibirsk (Russian Federation)
Description
The data on the efficiency of the multiparticle interaction effects: the Coulomb interaction in the quantum dots system, interlevel and interzone optical transitions in the charged quantum dots are presented for the Ge/Si system with the quantum dots layer density 3 x 1011 cm-2. The nature of the effects of the optical transitions energy shift by change in the quantum dots filling and charge is discussed
Abstract (Russian)
Для системы Ge/Si со слоевой плотностью квантовых точек 3 х 1011 см-2 приводятся данные по эффектам многочастичного взаимодействия: кулоновское взаимодействие в системе квантовых точек, межуровневые и межзонные оптические переходы в заряженных квантовых точках. Обсуждается природа эффектов смещения энергии оптических переходов при изменении заполнения и заряда квантовых точекAdditional details
Additional titles
- Original title (Russian)
- Эффекты взаимодействия в системе Ге/Си с квантовыми точками
Publishing Information
- Journal Title
- Izvestiya Akademii Nauk. Rossijskaya Akademiya Nauk. Seriya Fizicheskaya
- Journal Volume
- 65
- Journal Issue
- 2
- Journal Page Range
- p. 187-191
- ISSN
- 1026-3489
- CODEN
- IRAFEO
Conference
- Title
- International workshop on nanofotoniks
- Original Conference Title
- Mezhdunarodnoe soveshchanie po nanofotonike
- Dates
- 20-23 Mar 2000
- Place
- Nizhnij Novgorod (Russian Federation)
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 33013069
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ACTIVATION ENERGY; COULOMB FIELD; ELECTRIC CHARGES; ENERGY DEPENDENCE; ENERGY-LEVEL TRANSITIONS; GERMANIUM; HETEROJUNCTIONS; INTERACTIONS; MILLI EV RANGE; PHOTOCONDUCTIVITY; QUANTUM ELECTRONICS; SILICON; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0000-0013 K
- Descriptors DEC
- ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRICAL PROPERTIES; ELEMENTS; ENERGY; METALS; PHYSICAL PROPERTIES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; TEMPERATURE RANGE
Optional Information
- Notes
- 15 refs., 3 figs.