Monolithic integration of VCSEL and coupled cavity RCEPD for short-reach single-fiber bi-directional optical interconnects
Creators
- 1. Institute of Information Photonics and Optical Communications, Beijing University of Posts and Telecommunications (China)
Description
In this paper, we propose a monolithic integration of vertical-cavity surface-emitting laser (VCSEL) and coupled cavity resonant cavity enhancement photodiode (ccRCEPD). Based on this structure, a couple of matched chips is designed for single fiber bidirectional optical interconnects. That type of integration can easily put VCSEL and (photodiode) PD into one package, which not only reduces the costs of the device packages and even cut the costs of the optical system like beam splitter, but also can save the space in optical transceiver to make it tight. These chips' VCSELs show a threshold current of 1.6 mA and 1.7 mA, and a slope efficiency of 0.74 W/A and 0.97 W/A. VCSELs' modulation bandwidth is 9.5 GHz and 11.0 GHz, and PDs' response bandwidth is 10 GHz. Furthermore, the modulation bandwidth can be higher if the material of the multiple quantum wells (MQWs) is transformed GaAs/AlGaAs to InGaAs/AlGaAs. And by optimizing, the 3dB bandwidth of PD will be higher. Graphical abstract:
.
Additional details
Identifiers
Publishing Information
- Journal Title
- European Physical Journal. D, Atomic, Molecular and Optical Physics
- Journal Volume
- 73
- Journal Issue
- 8
- Journal Page Range
- p. 1-7
- ISSN
- 1434-6060
INIS
- Country of Publication
- France
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 51078047
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ALUMINIUM ARSENIDES; BEAM SPLITTING; GALLIUM ARSENIDES; GHZ RANGE; INDIUM ARSENIDES; LASER CAVITIES; LASERS; MODULATION; OPTICAL SYSTEMS; OPTIMIZATION; PHOTODIODES; QUANTUM WELLS; THRESHOLD CURRENT
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; ELECTRIC CURRENTS; FREQUENCY RANGE; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; NANOSTRUCTURES; PNICTIDES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Copyright
- Copyright (c) 2019 EDP Sciences / Societa Italiana di Fisica / Springer-Verlag GmbH Germany, part of Springer Nature