Published April 1, 2011
| Version v1
Journal article
Growth and interface phase stability of barium hexaferrite films on SiC(0001)
- 1. York JEOL Nanoscience Centre, Heslington, York YO10 5DD (United Kingdom)
- 2. Department of Physics, University of York, Heslington, York YO10 5DD (United Kingdom)
- 3. Chemical Engineering Department, Northeastern University, Boston, Massachusetts 02115 (United States)
Description
We have studied interface phase stability of the BaFe12O19 (BaM) thin films grown by molecular beam epitaxy on SiC(0001). The films were epitaxially grown with the following crystallographic relation: BaM(0001) parallel SiC(0001) and BaM(11-20) parallel SiC(11-20). High resolution TEM reveals the existence of two interfacial bands with different structure than BaM. The first band close to SiC is SiOx while the second has spinel structure and chemically corresponds to Fe3O4. These findings suggest that at initial growth stages Fe3O4 is more favorable than BaM. Density functional theory modeling of the phase stability of BaM compared to Fe3O4 shows that BaM is only stable at high oxygen partial pressures.
Additional details
Identifiers
- DOI
- 10.1063/1.3559496;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 109
- Journal Issue
- 7
- Journal Page Range
- p. 07E520-07E520.3
- ISSN
- 0021-8979
- CODEN
- JAPIAU
Conference
- Title
- 55. annual conference on magnetism and magnetic materials
- Dates
- 14-18 Nov 2010
- Place
- Atlanta, GA (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43037692
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- BARIUM COMPOUNDS; CRYSTALLOGRAPHY; DENSITY FUNCTIONAL METHOD; FERRITES; INTERFACES; IRON OXIDES; LAYERS; MOLECULAR BEAM EPITAXY; PARTIAL PRESSURE; PHASE STABILITY; RESOLUTION; SILICON CARBIDES; SIMULATION; SPINELS; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY
- Descriptors DEC
- ALKALINE EARTH METAL COMPOUNDS; CALCULATION METHODS; CARBIDES; CARBON COMPOUNDS; CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTRON MICROSCOPY; EPITAXY; FERRIMAGNETIC MATERIALS; FILMS; IRON COMPOUNDS; MAGNETIC MATERIALS; MATERIALS; MICROSCOPY; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SILICON COMPOUNDS; STABILITY; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENT COMPOUNDS; VARIATIONAL METHODS
Optional Information
- Notes
- (c) 2011 American Institute of Physics