Published August 1993
| Version v1
Journal article
Coulomb interaction of carriers in thin semiconductor filaments
Description
The Coulomb interaction effect on the properties of the current carrier main state is studied in the presence of dielectrics semiconducting filaments of different forms. A conclusion is made that anisotropy of electron system motion in the heterostructure increases the scale of all Coulomb interactions and shifts the main state of an electron-hole system in the direction of a higher density
Additional details
Additional titles
- Original title (Russian)
- Кулоновское взаимодействие носителей в тонких полупроводниковых нитях
Publishing Information
- Journal Title
- Fizika i Tekhnika Poluprovodnikov
- Journal Volume
- 27
- Journal Issue
- 8
- Journal Page Range
- p. 1256-1261.
- ISSN
- 0015-3222
- CODEN
- FTPPA4
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 26027001
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ANALYTICAL SOLUTION; CHARGE CARRIERS; COULOMB FIELD; COULOMB SCATTERING; CYLINDRICAL CONFIGURATION; ELECTRON DENSITY; ENERGY LEVELS; SEMICONDUCTOR MATERIALS
- Descriptors DEC
- BASIC INTERACTIONS; CONFIGURATION; ELASTIC SCATTERING; ELECTRIC FIELDS; ELECTROMAGNETIC INTERACTIONS; INTERACTIONS; MATERIALS; SCATTERING