Published August 2008
| Version v1
Journal article
Total dose radiation effects on SOI NMOS transistors with different layouts
- 1. Chinese Academy of Sciences, Beijing (China). Graduate Univ.
- 2. Chinese Academy of Sciences, Shanghai (China). Shanghai Inst. of Microsystem and Information Technology
Description
Partially-depleted Silicon-On-Insulator Negative Channel Metal Oxide Semiconductor (SOI NMOS) transistors with different layouts are fabricated on radiation hard Separation by IMplanted OXygen (SIMOX) substrate and tested using 10 keV X-ray radiation sources. The radiation performance is characterized by transistor threshold voltage shift and transistor leakage currents as a function of the total dose up to 2.0 x 106 rad(Si). The results show that the total dose radiation effects on NMOS devices are very sensitive to their layout structures. (authors)
Additional details
Publishing Information
- Journal Title
- Chinese Physics. C, High Energy Physics and Nuclear Physics
- Journal Volume
- 32
- Journal Issue
- 8
- Journal Page Range
- p. 645-648
- ISSN
- 1674-1137
INIS
- Country of Publication
- China
- Country of Input or Organization
- China
- INIS RN
- 40095357
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ELECTRIC POTENTIAL; FUNCTIONS; KEV RANGE 01-10; LEAKAGE CURRENT; MOS TRANSISTORS; PERFORMANCE; RADIATION DOSES; SENSITIVITY; SILICON; SUBSTRATES; X RADIATION; X-RAY SOURCES
- Descriptors DEC
- CURRENTS; DOSES; ELECTRIC CURRENTS; ELECTROMAGNETIC RADIATION; ELEMENTS; ENERGY RANGE; IONIZING RADIATIONS; KEV RANGE; RADIATION SOURCES; RADIATIONS; SEMICONDUCTOR DEVICES; SEMIMETALS; TRANSISTORS
Optional Information
- Notes
- 5 figs., 10 refs.