Published May 15, 2014
| Version v1
Journal article
Properties of the In2O3-Si interface: An ab initio study of a model geometry
Creators
- 1. Institut für Festkörpertheorie und -optik, Friedrich-Schiller-Universität and European Theoretical Spectroscopy Facility (ETSF), Max-Wien-Platz 1, 07743 Jena (Germany)
Description
The In2O3(001)-Si(001) heterojunction is studied by means of the ab initio density functional theory, quasiparticle corrections, and the supercell method. We construct a model interface based on the idea of a coincidence lattice, only Si-O interface bonds and biaxially strained In2O3. The properties of the interface and their consequences for the junction are mainly described in terms of electronic band levels and charge redistribution. The results indicate a type II heterostructure caused by interface dipole alteration due to electron rearrangements
Additional details
Identifiers
- DOI
- 10.1063/1.4878271;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 1598
- Journal Issue
- 1
- Journal Page Range
- p. 27-30
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 7. international conference on low dimensional structures and devices
- Acronym
- LDSD 2011
- Dates
- 22-27 May 2011
- Place
- Telchac (Mexico)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45101669
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CORRECTIONS; CRYSTAL STRUCTURE; DENSITY FUNCTIONAL METHOD; DIPOLES; ELECTRONIC STRUCTURE; ELECTRONS; HETEROJUNCTIONS; INDIUM OXIDES; INTERFACES; SILICON; STRAINS
- Descriptors DEC
- CALCULATION METHODS; CHALCOGENIDES; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; INDIUM COMPOUNDS; LEPTONS; MULTIPOLES; OXIDES; OXYGEN COMPOUNDS; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; VARIATIONAL METHODS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC