Influence of insulator-semiconductor interface parameters and bulk parameters on frequency dependence of GaAs MIS conductance

The numerical calculations of MIS conductance vs frequency at fixed gate voltage have been presented. The equivalent circuit of MIS structure including a. c. losses in insulator and series resistance has been used. The analysis is based on the idea that frequency behaviour of conductance is evoked by tunnelling of electrons between semiconductor and spatially distributed insulator-semiconductor interface states. The existence of acceptor and donor states with exponential energy dependence and Gaussian type distribution of density in space have been assumed. The possibility of explanations of experimental data for SiO2-GaAs MIS structure in the frame of accepted model has been presented. (author)