Published December 31, 2003
| Version v1
Journal article
Annealing mechanisms of divacancies in silicon
Description
By combining infrared and positron annihilation spectroscopy new insight has been gained into the mechanism(s) by which divacancies in silicon anneal. Isothermal and isochronal annealings of 8 MeV proton irradiated Si strongly suggest two processes, one due to recombination with interstitials and the other due to vacancy agglomeration. The two processes have nearly the same activation energy
Additional details
Identifiers
- DOI
- 10.1016/j.physb.2003.09.240;
- PII
- S0921452603007737;
Publishing Information
- Journal Title
- Physica. B, Condensed Matter
- Journal Volume
- 340-342
- Journal Issue
- 3-4
- Journal Page Range
- p. 609-612
- ISSN
- 0921-4526
- CODEN
- PHYBE3
Conference
- Title
- 22. international conference on defects in semiconductors
- Dates
- 28 Jul - 1 Aug 2003
- Place
- Aarhus (Denmark)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37000634
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ACTIVATION ENERGY; AGGLOMERATION; ANNEALING; ANNIHILATION; INTERSTITIALS; IRRADIATION; MEV RANGE; PHYSICAL RADIATION EFFECTS; POSITRONS; PROTON BEAMS; PROTONS; RECOMBINATION; SILICON; SPECTROSCOPY; VACANCIES
- Descriptors DEC
- ANTILEPTONS; ANTIMATTER; ANTIPARTICLES; BARYONS; BEAMS; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; ENERGY; ENERGY RANGE; FERMIONS; HADRONS; HEAT TREATMENTS; INTERACTIONS; LEPTONS; MATTER; NUCLEON BEAMS; NUCLEONS; PARTICLE BEAMS; PARTICLE INTERACTIONS; POINT DEFECTS; RADIATION EFFECTS; SEMIMETALS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.