Research on semiconductor alpha detector performance under high temperature conditions

Design a SiC semiconductor detector, study alpha detection performance under the different temperature condition after baking. The maximum range of ²⁴¹Am source alpha in SiC was simulated using SRIM2011, and determined the SiC semiconductor detector epitaxial layer thickness is 20 μm. According to the design results, making the SiC semiconductor detector with 5 mm × 5 mm sensitive area. The establishment of the high temperature experimental method, considering the temperature uniformity, temperature fluctuation and the constant temperature time point of view, select the ZDXS4 high temperature experiment furnace as baking equipment. Eight high temperature baking at different time were followed on the detector, and have detected the waveform and energy spectrum after cooling under vacuum conditions. Results show that, within 360 ℃ temperature range of SiC semiconductor detector, rise time less than 5 ns, the signal amplitude changes less than 20% that will not reduce the alpha final detection efficiency, with the increase of temperature, there was no significant change in energy resolution. Through experimental verification, the SiC semiconductor detector of ordinary welding craft after 10 h baking of 360 ℃ temperature, the alpha detection performance had no obvious change. In the subsequent verification experiments, to lay the foundation for the engineering development of high temperature detector, suggest the use of resistant high temperature welding craft on the detector, and proper protective coating treatment on the surface. (authors)