Published October 20, 2003
| Version v1
Journal article
Activation and diffusion studies of ion-implanted p and n dopants in germanium
Creators
- 1. Department of Electrical Engineering, Stanford University, Stanford, California 94305 (United States)
Description
We have demonstrated symmetrically high levels of electrical activation of both p- and n-type dopants in germanium. Rapid thermal annealing of various commonly implanted dopant species were performed in the temperature range of 600-850 deg. C in germanium substrates. Diffusion studies were also carried out by using different anneal times and temperatures. T-SUPREMTM simulations were used to fit the experimental profiles and to extract the diffusion coefficient of various dopants
Additional details
Identifiers
- DOI
- 10.1063/1.1618382;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 83
- Journal Issue
- 16
- Journal Page Range
- p. 3275-3277
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36025538
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; DIFFUSION; DOPED MATERIALS; GERMANIUM; ION IMPLANTATION; SEMICONDUCTOR MATERIALS; SIMULATION; SUBSTRATES; TEMPERATURE RANGE 0400-1000 K; TEMPERATURE RANGE 1000-4000 K
- Descriptors DEC
- ELEMENTS; HEAT TREATMENTS; MATERIALS; METALS; TEMPERATURE RANGE
Optional Information
- Notes
- (c) 2003 American Institute of Physics.