Published May 2013
| Version v1
Journal article
Four distributed feedback laser array integrated with multimode-interference and semiconductor optical amplifier
- 1. Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083 (China)
- 2. Department of Electronic Engineering, Tsinghua University, Beijing 100084 (China)
Description
Monolithic integration of four 1.55-μm-range InGaAsP/InP distributed feedback (DFB) lasers using varied ridge width with a 4 × 1-multimode-interference (MMI) optical combiner and a semiconductor optical amplifier (SOA) is demonstrated. The average output power and the threshold current are 1.8 mW and 35 mA, respectively, when the injection current of the SOA is 100 mA, with a side mode suppression ratio (SMSR) exceeding 40 dB. The four channels have a 1-nm average channel spacing and can operate separately or simultaneously. (electromagnetism, optics, acoustics, heat transfer, classical mechanics, and fluid dynamics)
Availability note (English)
Available from http://dx.doi.org/10.1088/1674-1056/22/5/054211Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics. B
- Journal Volume
- 22
- Journal Issue
- 5
- Journal Page Range
- [4 p.]
- ISSN
- 1674-1056
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45032020
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AMPLIFIERS; GALLIUM ARSENIDES; HETEROJUNCTIONS; INDIUM PHOSPHIDES; INTERFACES; INTERFERENCE; LASER RADIATION; SEMICONDUCTOR MATERIALS; THRESHOLD CURRENT
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CURRENTS; ELECTRIC CURRENTS; ELECTROMAGNETIC RADIATION; ELECTRONIC EQUIPMENT; EQUIPMENT; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; MATERIALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; RADIATIONS; SEMICONDUCTOR JUNCTIONS