Published 1986 | Version v1
Book Metadata-only

Temperature dependence of Auger recombination in InGaAsP

Creators

  • 1. British Telecom Research Labs., Martlesham Heath, Ipswich, Suffolk 1P5 7RE

Description

This paper reports measurements of Auger recombination and its temperature dependence in 1.5 μm InGaAsP films using the method of time-resolved nonlinear absorption following intense photoexcitation. The results establish that the temperature dependence of the Auger coefficient is small

Additional details

Publishing Information

Publisher
IEEE Service Center.
Imprint Place
Piscataway, NJ (USA)
Imprint Title
International conference (XIV) on quantum electronics. Digest of technical papers
Journal Page Range
p. 88.

Conference

Title
OSA/IEEE international quantum electronics conference (IQEE '86).
Dates
9-13 Jun 1986.
Place
San Francisco, CA (USA).

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
18040615
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
AUGER EFFECT; CARRIER LIFETIME; GALLIUM ARSENIDES; GALLIUM PHOSPHIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; LASER SPECTROSCOPY; NONLINEAR OPTICS; RECOMBINATION; RESOLUTION; TEMPERATURE DEPENDENCE
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; LIFETIME; OPTICS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; SPECTROSCOPY