Published December 1998
| Version v1
Journal article
Technique to measure an ion track profile
Creators
- 1. CEA, Bruyeres le Chatel (France)
- 2. Naval Research Lab., Washington, DC (United States)
- 3. SFA, Landover, MD (United States)
- 4. GSI, Darmstadt (Germany)
Description
Effects of the radial density distribution of carriers generated in a single ion track have been observed in thin silicon detectors. These devices have been irradiated with either an ion microbeam at low energy or a high-energy standard ion beam. The authors describe the mode of operation of the tested structure, and propose an interpretation of the experimental charge collection data to extract information on the ion track profile. Experimental results are compared to 3D simulations and simplified analytical profiles
Additional details
Publishing Information
- Journal Title
- IEEE Transactions on Nuclear Science
- Journal Volume
- 45
- Journal Issue
- 6Pt1
- Journal Page Range
- p. 2563-2570
- ISSN
- 0018-9499
- CODEN
- IETNAE
Conference
- Title
- IEEE nuclear and space radiation effects conference
- Dates
- 20-24 Jul 1998
- Place
- Newport Beach, CA (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 30034812
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CARRIER DENSITY; CHARGE CARRIERS; CHARGE COLLECTION; COMPARATIVE EVALUATIONS; ERRORS; IONS; PARTICLE TRACKS; PHYSICAL RADIATION EFFECTS; SI SEMICONDUCTOR DETECTORS
- Descriptors DEC
- CHARGED PARTICLES; EVALUATION; MEASURING INSTRUMENTS; RADIATION DETECTORS; RADIATION EFFECTS; SEMICONDUCTOR DETECTORS
Optional Information
- Secondary number(s)
- CONF-980705--