The Simulation of Bragg-Case Section Images of Dislocations and Inclusions in Aspect of Identification of Defects in SiC Crystals
Creators
- 1. Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland)
- 2. Institute of Atomic Energy, 05-400 Otwock-Swierk (Poland)
Description
The numerical simulation has been applied for studying of Bragg-case section topographic images of dislocation and rod-like inclusions. The validity of simple approximation of extinction contrast was confirmed in the case of screw dislocations in silicon carbide crystals. A procedure for approximate calculation of the strain field of rod-like inclusion was constructed, consisting of adding the contributions from a very large number of point-like inclusions uniformly distributed inside the assumed volume of the inclusion. The procedure ensured a reasonable similarity between the simulated topographs and experimental Bragg-case section topographic images of some pipe-formed cavities in silicon carbide crystals. The method is useful for some other materials, e.g. it enabled to compute realistic simulation of plane-wave topographs of the rod-like inclusions in YAG. (authors)
Availability note (English)
Also available at http://przyrbwn.icm.edu.pl/APP/PDF/117/a117z218.pdfAdditional details
Additional titles
- Augmented title (English)
- PACS numbers: 61.72.Ff, 61.72.up
Identifiers
Publishing Information
- Journal Title
- Acta Physica Polonica. Series A (Online)
- Journal Volume
- 117
- Journal Issue
- 2
- Journal Page Range
- p. 336-340
- ISSN
- 1898-794X
Conference
- Title
- 8. National Meeting of Synchrotron Radiation Users
- Acronym
- KSUPS-8
- Dates
- 24-26 Sep 2009
- Place
- Podlesice (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 42099443
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- CALCULATION METHODS; COMPUTERIZED SIMULATION; DISLOCATIONS; INCLUSIONS; SILICON CARBIDES; X-RAY DIFFRACTION
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFRACTION; LINE DEFECTS; SCATTERING; SILICON COMPOUNDS; SIMULATION
Optional Information
- Notes
- 20 refs., 8 figs.