Published February 2010 | Version v1
Journal article

The Simulation of Bragg-Case Section Images of Dislocations and Inclusions in Aspect of Identification of Defects in SiC Crystals

  • 1. Institute of Electronic Materials Technology, Wolczynska 133, 01-919 Warsaw (Poland)
  • 2. Institute of Atomic Energy, 05-400 Otwock-Swierk (Poland)

Description

The numerical simulation has been applied for studying of Bragg-case section topographic images of dislocation and rod-like inclusions. The validity of simple approximation of extinction contrast was confirmed in the case of screw dislocations in silicon carbide crystals. A procedure for approximate calculation of the strain field of rod-like inclusion was constructed, consisting of adding the contributions from a very large number of point-like inclusions uniformly distributed inside the assumed volume of the inclusion. The procedure ensured a reasonable similarity between the simulated topographs and experimental Bragg-case section topographic images of some pipe-formed cavities in silicon carbide crystals. The method is useful for some other materials, e.g. it enabled to compute realistic simulation of plane-wave topographs of the rod-like inclusions in YAG. (authors)

Availability note (English)

Also available at http://przyrbwn.icm.edu.pl/APP/PDF/117/a117z218.pdf

Additional details

Additional titles

Augmented title (English)
PACS numbers: 61.72.Ff, 61.72.up

Publishing Information

Journal Title
Acta Physica Polonica. Series A (Online)
Journal Volume
117
Journal Issue
2
Journal Page Range
p. 336-340
ISSN
1898-794X

Conference

Title
8. National Meeting of Synchrotron Radiation Users
Acronym
KSUPS-8
Dates
24-26 Sep 2009
Place
Podlesice (Poland)

INIS

Country of Publication
Poland
Country of Input or Organization
Poland
INIS RN
42099443
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference
Descriptors DEI
CALCULATION METHODS; COMPUTERIZED SIMULATION; DISLOCATIONS; INCLUSIONS; SILICON CARBIDES; X-RAY DIFFRACTION
Descriptors DEC
CARBIDES; CARBON COMPOUNDS; COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFRACTION; LINE DEFECTS; SCATTERING; SILICON COMPOUNDS; SIMULATION

Optional Information

Notes
20 refs., 8 figs.